Demonstration of HfO₂-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si_0.8Ge_0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger

Channel thickness dependency of high-k gate dielectric based double-gate CMOS inverter

This work investigates the channel thickness dependency of high-k gate dielectric-based complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a conventional double-gate metal gate oxide semiconductor field-effect transistor (DG-MOSFET). It is espied that the use of high-k dielectric as a gate oxide in n/p DG-MOSFET based CMOS inverter results in a high noise margin as well...

The Impact of Thickness Control in HfSiON Gate Dielectric on Electron Mobility with sub-nm EOT

High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm equivalent oxide thickness

CMOS gate modeling based on equivalent inverter

A method for modeling complex CMOS gates by the reduction of each gate to an effective equivalent inverter is introduced. The conducting and parasitic behavior of parallel and serially connected transistors is accurately analyzed and an equivalent transistor is extracted for each case, taking into account the actual operating conditions of each device in the structure. The accuracy of the metho...

the effect of lexically based language teaching (lblt) on vocabulary learning among iranian pre-university students

هدف پژوهش حاضر بررسی تاثیر روش تدریس واژگانی (واژه-محور) بر یادگیری لغات در بین دانش آموزان دوره پیش دانشگاهی است. بدین منظور دو گروه از دانش آموزان دوره پیش دانشگاهی (شصت نفر) که در سال تحصیلی 1389 در شهرستان نور آباد استان لرستان مشغول به تحصیل بودند انتخاب شده و به صورت قراردادی گروه آزمایش و گواه در نظر گرفته شدند. در ابتدا به منظور اطمینان یافتن از میزان همگن بودن دو گروه از دانش واژگان، آ...